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Wide Bandgap Semiconductor-Based Electronics

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This state-of-the-art reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world p...
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  • 30 September 2020
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Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications.

This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems.

The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas.

Key Features

  • Provides comprehensive coverage of wide bandgap semiconductor-based electronics
  • Covers both materials and devices
  • Includes cutting-edge research not covered in other books
  • Very experienced editors – they have produced 19 other books in related areas

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Price: £25.00
Pages: 582
Publisher: Institute of Physics Publishing
Imprint: Institute of Physics Publishing
Publication Date: 30 September 2020
Trim Size: 10.00 X 7.00 in
ISBN: 9780750325172
Format: Paperback
BISACs:

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The editors would like to acknowledge support from the HDTRA12020002
cooperative research agreement ‘Interaction of Ionizing Radiation with Matter
University Research Alliance’ funded by the Defense Threat Reduction Agency
(DTRA), particularly Jacob Calkins.



The editors would like to acknowledge support from the HDTRA12020002
cooperative research agreement ‘Interaction of Ionizing Radiation with Matter
University Research Alliance’ funded by the Defense Threat Reduction Agency
(DTRA), particularly Jacob Calkins



The work was supported in part by the grant from the Russian National Science Foundation (Grant #19-19-00409)

The project at UF was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. Research at NRL was supported by the Office of Naval Research, partially under Award Number N00014-15-1-2392.

The work at UF is partially supported by HDTRA1-17-1-0011 (Jacob Calkins, monitor) and NSF DMR-1856662 (Tania Paskova). The project or effort depicted is sponsored by the Department of the Defense, Defense Threat Reduction Agency. The work at Korea University was supported by Space Core Technology Development Program (2017M1A3A3A02015033) and the Technology Development Program to Solve Climate Changes (2017M1A2A2087351) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea. The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST (MISiS) (K2-2014-055). The work at LU is supported by NSF DMR- 1901563.

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1A09083988, 2017R1D1A3B03035420), and Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185).