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Applying HgCdTe infrared material as a key example, this book delves into the theoretical knowledge and experimental techniques necessary to achieve high quality semiconductor lattice-mismatched heteroepitaxy for applications in high performance electronic and optoelectronic devices. The concepts and techniques introduced in this book can be extended to other semiconductor material systems and devices, and thus, it serves as an essential reference book for engineers, researchers and academics working in the general area of semiconductor epitaxy and related device applications. By guiding the development of superior heteroepitaxial materials, it supports the creation of next-generation electronic and optoelectronic devices with expanded performance and functionality.
Key Features:
- Author is a leading researcher in area of HgCdTe infrared materials and detectors
- Review of state of the art in third gen infrared materials and detectors
- Techniques applicable to epitaxial growth techniques for other semiconductor materials
Preface
Acknowledgments
Author biography
Description
1 Introduction to HgCdTe infrared materials and detectors
2 General growth mechanism of heteroepitaxy
3 Heteroepitaxial growth of HgCdTe on lattice-mismatched substrates
4 Heteroepitaxial growth of HgCdTe on lattice-mismatched two-dimensional substrates
5 HgCdTe infrared detectors based on lattice-mismatched epitaxial growth
6 Heteroepitaxy of HgCdSe on GaSb—an alternative pathway towards infrared detectors with features of lower cost and larger array format
7 Outlook for next-generation HgCdTe infrared detectors with features of lower cost and larger array format