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Applying HgCdTe infrared material as a key example, this book delves into the theoretical knowledge and experimental techniques necessary to achieve high quality semiconductor lattice-mismatched heteroepitaxy for applications in high performance electronic and optoelectronic devices. The concepts and techniques introduced in this book can be extended to other semiconductor material systems and devices, and thus, it serves as an essential reference book for engineers, researchers and academics working in the general area of semiconductor epitaxy and related device applications. By guiding the development of superior heteroepitaxial materials, it supports the creation of next-generation electronic and optoelectronic devices with expanded performance and functionality.
Key Features:
- Author is a leading researcher in area of HgCdTe infrared materials and detectors
- Review of state of the art in third gen infrared materials and detectors
- Techniques applicable to epitaxial growth techniques for other semiconductor materials
Dr. Wen Lei is a professor, an ARC Future Fellow, the Program Chair of Electrical and Electronic Engineering, and the Chair of the IEEE Western Australia Joint ESP Chapter (Electron Devices Society, Solid State Circuits Society, and Photonics Society), and leads the Electronic Materials and Devices Research at Department of Electrical, Electronic and Computer Engineering, University of Western Australia. His current research mainly focuses on semiconductor materials, devices and their system applications, especially infrared detectors. He, together with his colleagues, has demonstrated the first Australian-made prototype mid-wave HgCdTe infrared focal plane arrays with commercial format size. He holds a number of patents and has published 4 book chapters and more than 160 high profile papers in top journals including Physical Review Letters, Applied Physics Reviews, Advanced Materials, Advanced Functional Materials, etc. He was awarded his prestigious ARC Future Fellowship in 2013 and ARC Australian Postdoctoral Fellowship in 2006. He also received several “Best Paper" Awards from IEEE journals and IEEE conferences, and is regularly invited to deliver plenary/keynote presentations at premium international conferences. He is also an associate editor/editorial board member of five international journals, a member of Scientific Advisory Board/Technical Program Committee/Organizing Committee for several international conferences and a regular reviewer for various international prestigious journals and funding agencies in Australia, Singapore, Netherlands, Israel, Romania and Hong Kong.
Preface
Acknowledgments
Author biography
Description
1 Introduction to HgCdTe infrared materials and detectors
2 General growth mechanism of heteroepitaxy
3 Heteroepitaxial growth of HgCdTe on lattice-mismatched substrates
4 Heteroepitaxial growth of HgCdTe on lattice-mismatched two-dimensional substrates
5 HgCdTe infrared detectors based on lattice-mismatched epitaxial growth
6 Heteroepitaxy of HgCdSe on GaSb—an alternative pathway towards infrared detectors with features of lower cost and larger array format
7 Outlook for next-generation HgCdTe infrared detectors with features of lower cost and larger array format