Maksym Myronov is an Associate Professor in the Condensed Matter Physics Group of the Department of Physics, at The University of Warwick in the UK. Maksym is an expert, with over 20 years of experience in epitaxial growth, materials characterization and devices technologies of the Group IV and III-V semiconductors. In 2001, he was awarded a PhD degree in Physics by The University of Warwick. Since then, he worked in various research centres and universities in UK, Europe and Japan. In 2008, he joined The University of Warwick as a member of the Physics Department staff. Therein, he established SiGe Chemical Vapour Deposition capabilities at Warwick and since then has been leading and developing them followed by an expansion to Si-Ge-C-Sn epitaxial growth capabilities. He mainly researches epitaxy of semiconductor thin films and low-dimensional structures with special interest in creation of novel epitaxial material systems for applications in electronic, photonic, thermoelectric, spintronic, photovoltaic, sensors, MEMS/NEMS, energy storage and quantum devices. He has published 236 papers in peer reviewed journals, 4 book chapters and filed 10 patents.

1) Introduction (5 pages, 3+ figures) 2) Physics and properties of the group-IV semiconductor materials (40+ pages) a. Materials (5 pages, 5+ figures) b. Crystal structure (5 pages, 5+ figures) c. Energy bands (5 pages, 5+ figures) d. Electrical properties (10 pages, 10+ figures) e. Optical properties (5 pages, 5+ figures) f. Thermal properties (5 pages, 5+ figures) g. Mechanical properties (5 pages, 5+ figures) h. Low dimensional systems (5 pages, 3+ figures) 3) Devices building materials elements (5 pages, 5+ figures) 4) Substrates for epitaxy (15 pages, 10+ figures) 5) Epitaxy fundamentals (30+ pages, 20+ figures)) a. Epitaxy (homo and heteroepitaxy) b. Surface steps c. Surface processes d. Incorporation e. Diffusion f. Segregation g. Epitaxial growth modes
h. Doping (5 pages, 3+ figures) 6) Strained and relaxed heteroepitaxy (10 pages, 5+ figures) 7) Virtual substrates (15 pages, 10+ figures) 8) Selective epitaxy (5 pages, 5+ figures) 9) Epitaxial growth techniques (30+ pages) a. MBE (10 pages, 10+ figures) b. CVD (20 pages, 20+ figures) 10) Epilayers characterisation techniques (20 pages, 20+ figures) 11) Silicon epitaxy (10 pages, 10+ figures) 12) Silicon Carbide epitaxy (10 pages, 10+ figures) 13) Silicon Germanium epitaxy (20 pages, 10+ figures) 14) Silicon Carbon epitaxy (5 pages, 5+ figures) 15) Germanium Tin epitaxy (10 pages, 10+ figures) 16) Silicon Germanium Tin epitaxy (5 pages, 5+ figures) 17) Diamond epitaxy (5 pages, 5+ figures) Appendix